Device Development Engineer
目录: |
Jobs |
职位: |
Engineer |
国捷克: |
China |
城市: |
Chengdu |
Required degree: |
Master's degree |
雇主: |
Chengdu Minshan Power Semiconductor Tech Research Institute |
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Job Responsibilities
1. Responsible for device design and development, including trench MOSFET, SGT, super junction MOSFET, LDMOS, IGBT and other devices;
2. Work content includes process simulation, device simulation, layout, device characteristic analysis, device reliability and identification;
3. Publish device design rules to other teams.
Job Requirements
Master's degree or above, graduated from electronic engineering, physics, electronic materials science and related majors. More than 3 years of working experience in power device design and simulation;
1. Proficient in TCAD software, such as Silvaco Taurus or Sentaurus;
2. Can use layout tools to draw test pattern layouts, such as laker, virtuoso;
3. Proficient in device characteristic analysis instruments, such as B1505, HP4155, HP8753D and HP4284;
4. Have basic knowledge of semiconductor process flow.