Opportunities

Created: 2024-02-24 / Modified: 2024-04-22

Device Development Engineer

Category:
Jobs
Position:
Engineer
Country:
China
City/Province:
Chengdu
Required degree:
Master's degree
Company:
Chengdu Minshan Power Semiconductor Tech Research Institute
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Description

Job Responsibilities

 

1. Responsible for device design and development, including trench MOSFET, SGT, super junction MOSFET, LDMOS, IGBT and other devices;

2. Work content includes process simulation, device simulation, layout, device characteristic analysis, device reliability and identification;

3. Publish device design rules to other teams.

 

Job Requirements

Master's degree or above, graduated from electronic engineering, physics, electronic materials science and related majors. More than 3 years of working experience in power device design and simulation;

1. Proficient in TCAD software, such as Silvaco Taurus or Sentaurus;

2. Can use layout tools to draw test pattern layouts, such as laker, virtuoso;

3. Proficient in device characteristic analysis instruments, such as B1505, HP4155, HP8753D and HP4284;

4. Have basic knowledge of semiconductor process flow.